Microstructure scaling of metal–insulator transition properties of VO₂ films

The metallic to semiconducting resistivity ratios and the transition temperature sharpness of annealed atomic layer deposited VO2 films on amorphous silicon dioxide are found depend grain size in a closely similar way from previous sputtered or pulse laser work. This occurs because dominance growth compaction processes leads common scaling properties with size. Density functional simulations find that V–V dimerizations allow boundaries remain but reduced bandgap, while others create boundaries, reducing ratio for smaller grains both cases.